Formation of Spatially Addressed Ga(As)Sb Quantum Rings on GaAs(001) Substrates by Droplet Epitaxy

被引：8

作者：

Alonso-Gonzalez, Pablo ^{[1
]}

Gonzalez, Luisa ^{[1
]}

Fuster, David ^{[1
]}

Gonzalez, Yolanda ^{[1
]}

Taboada, Alfonso G. ^{[1
]}

Maria Ripalda, Jose ^{[1
]}

Beltran, Ana M. ^{[2
]}

Sales, David L. ^{[2
]}

Ben, Teresa ^{[2
]}

Molina, Sergio I. ^{[2
]}

机构：

[1] CSIC, IMM CNM, Madrid 28760, Spain

[2] Univ Cadiz, Dept Ciencia Mat & IM & QI, Cadiz 11510, Spain

来源：

CRYSTAL GROWTH & DESIGN | 2009年 / 9卷 / 02期

关键词：

DOTS; SINGLE; GROWTH;

D O I：

10.1021/cg801186w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work we report on the ability to form low density Ga(As)Sb quantum ring-shaped nanostructures (Q-rings) on GaAs(001) substrates by the droplet epitaxy technique. The Q-rings are formed by crystallization of Ga droplets under antimony flux. After being capped by a GaAs layer, these nanostructures show surface mounding features that are correlated with the buried nanostructures, as demonstrated by TEM analysis, permitting an easy surface location of the optically active Q-rings.

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收藏

页码：1216 / 1218

页数：3

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