Spin-dependent tunneling in double tunnel junctions with a discontinuous intermediate layer

被引：5

作者：

Saito, Y ^{[1
]}

Nakajima, K ^{[1
]}

Tanaka, K ^{[1
]}

Inomata, K ^{[1
]}

机构：

[1] Toshiba Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

ferromagnetic double tunnel junctions; tunnel magnetoresistance; temperature and dc bias dependencies;

D O I：

10.1109/20.801020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detailed characteristics and tunnel magnetoresistance (TMR) properties of the double tunnel junctions (DTJs) through Co80Pt20 hard magnetic particles were investigated in the low barrier height regime. Significant difference in current distribution effect was observed in DTJs through discontinuous particles. No geometrically enhanced magnetoresistance occurs in the cross-shaped 0.01 mm(2) size junctions when the measured junction resistance is 10 times smaller than the electrode resistance due to the decrease in the effective junction area in DTJs with discontinuous ferromagnetic particles. Moreover, temperature independent TMR ratio and enhancement of the TMR ratio in a low bias voltage regime were observed in DTJs through Co80Pt20 hard magnetic particles in low barrier height regime.

引用

页码：2904 / 2906

页数：3

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