Growth and characterization of p-type Cd1-xZnxTe (x=0.2, 0.3, 0.4)

被引：30

作者：

Kolesnikov, NN

Kolchin, AA

Alov, DL

Ivanov, YN

Chernov, AA

Schieber, M

Hermon, H

James, RB

Goorsky, MS

Yoon, H

Toney, J

Brunett, B

Schlesinger, TE

机构：

[1] SANDIA NATL LABS,DEPT 8230,LIVERMORE,CA 94550

[2] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,MOSCOW 142432,RUSSIA

[3] RUSSIAN ACAD SCI,INST CRYSTALLOG,MOSCOW,RUSSIA

[4] UNIV CALIF LOS ANGELES,LOS ANGELES,CA 90024

[5] CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期

关键词：

high pressure vertical Bridgman; Cd1-xZnxTe; semiconductor radiation detectors;

D O I：

10.1016/S0022-0248(96)01151-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single crystals of p-type semi-insulating Cd1-xZnxTe (CZT) with x = 0.2, 0.3 and 0.4 were grown using the high-pressure vertical Bridgman method. The crystals showed a high degree of axial homogeneity over most of the length of the ingot. The crystals were characterized by measuring the specific resistivity, X-ray spectral analysis, triaxial rocking curves, photoluminescence, etch-pit density and photocurrent kinetics. Despite the high homogeneity the photocurrent kinetics are worse than n-type CZT (x = 0.1 and 0.2) also grown by high-pressure vertical Bridgman.

引用

页码：256 / 262

页数：7

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