Optical and electrical properties of transparent conducting In2O3-ZrO2 films

被引：25

作者：

Qadri, SB ^{[1
]}

Kim, H

Khan, HR

Piqué, A

Horwitz, JS

Chrisey, D

Skelton, EF

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] George Washington Univ, Washington, DC 20052 USA

[3] Forschungsinst Edelmet & Met Chem, D-73525 Schwabisch Gmund, Germany

来源：

JOURNAL OF MATERIALS RESEARCH | 2000年 / 15卷 / 01期

关键词：

D O I：

10.1557/JMR.2000.0007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical transparencies and electrical conductivities of thin films of In2O3 mixed with ZrO2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser deposition. Indium-zirconium oxide films with a ZrO2 content up to a 15 wt% were conducting and more than 80% transparent from 450 to 700 nm. As the ZrO2 content increased from 0 to 15 wt%, the electrical resistivities increased from 1.28 x 10(-3) to 6.48 x 10(-2) n cm, the carrier densities were decreased from 2.14 x 10(20) to 1.0 x 10(18)/cm(3), and the Hall mobilities decreased from 21 to 5 cm(2) V-1 s(-1), all monotonically.

引用

页码：21 / 24

页数：4