Coupled InAs/GaAs quantum dots with well-defined electronic shells

被引：77

作者：

Fafard, S ^{[1
]}

Spanner, M ^{[1
]}

McCaffrey, JP ^{[1
]}

Wasilewski, ZR ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期

关键词：

D O I：

10.1063/1.126317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Artificial molecules are studied using coupled quantum-dot (QD) ensembles with well-defined electronic shells. The coupling strength between the zero-dimensional states is varied by changing the distance between two layers of stacked self-assembled InAs/GaAs QDs. For strongly coupled QDs grown with a 4 nm spacer, state-filling spectroscopy reveals a shift of the QD symmetric state to lower energies by similar to 23 meV. The wetting layer states are also strongly coupled because of the shallow confinement, resulting in a redshift of its symmetric state by similar to 26 meV. (C) 2000 American Institute of Physics. [S0003-6951(00)05416-4].

引用

页码：2268 / 2270

页数：3

共 29 条

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