Thermally stimulated luminescence from x-irradiated porous silicon

We have measured thermally stimulated luminescence from light-emitting porous silicon that has been x irradiated at room temperature and heated to 400 degrees C. The glow curve exhibits peaks at 103, 155, 219, and 271 degrees C, with additional maxima occurring above 400 degrees C. Each of the peaks emits similar emission spectra characterized by a band with a maximum near 720 nm and 0.39 eV full width at half-maximum. Following x irradiation at room temperature, the sample exhibits well-known photoluminescence, but after heating to 400 degrees C, the loss of hydrogen renders the sample nonphotoluminescent. However, thermally stimulated luminescence can be repeatedly induced. Observation of thermally stimulated luminescence is unambiguous evidence for the existence of an insulating surface layer on porous silicon. (C) 1997 American Institute of Physics.