Organic probe for inhomogeneous band bending

被引:14
作者
Park, S [1 ]
Kampen, TU
Zahn, DRT
Braun, W
机构
[1] TU Chemnitz, D-09107 Chemnitz, Germany
[2] BESSY GmbH, D-12489 Berlin, Germany
关键词
D O I
10.1063/1.126628
中图分类号
O59 [应用物理学];
学科分类号
摘要
The initial stage of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) adsorption on Se-passivated n-type GaAs(100)-(2x1) surface was investigated using high-resolution soft x-ray photoemission spectroscopy. A very small amount of PTCDA (<<1 ML) is sufficient to induce a reduction of inhomogeneous band bending at the surface as judged from the sharpening of the core level spectra. This is interpreted in terms of preferential sticking of the organic molecules to surface defects. The results presented in this letter indicate that organic molecules may also serve as very suitable probes for inorganic semiconductor surface evaluation through the photoemission studies. (C) 2000 American Institute of Physics. [S0003-6951(00)00522-2].
引用
收藏
页码:3200 / 3202
页数:3
相关论文
共 12 条
[1]  
Cardona M., 1978, PHOTOEMISSION SOLIDS
[2]   SEMICONDUCTOR ANALYSIS USING ORGANIC-ON-INORGANIC CONTACT BARRIERS .2. APPLICATION TO INP-BASED COMPOUND SEMICONDUCTORS [J].
FORREST, SR ;
KAPLAN, ML ;
SCHMIDT, PH .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2406-2418
[3]   Ultrathin organic films grown by organic molecular beam deposition and related techniques [J].
Forrest, SR .
CHEMICAL REVIEWS, 1997, 97 (06) :1793-1896
[4]   BAND LINEUP AT AN ORGANIC-INORGANIC SEMICONDUCTOR HETEROINTERFACE - PERYLENETETRACARBOXYLIC DIANHYDRIDE GAAS(100) [J].
HIROSE, Y ;
CHEN, W ;
HASKAL, EI ;
FORREST, SR ;
KAHN, A .
APPLIED PHYSICS LETTERS, 1994, 64 (25) :3482-3484
[5]   The influence of sulfur on the In/GaAs(100) interface formation [J].
Hohenecker, S ;
Kampen, TU ;
Werninghaus, T ;
Zahn, DRT ;
Braun, W .
APPLIED SURFACE SCIENCE, 1999, 142 (1-4) :28-32
[6]   The influence of a selenium interlayer on the In/GaAs(100) interface formation [J].
Hohenecker, S ;
Drews, D ;
Lubbe, M ;
Zahn, DRT ;
Braun, W .
APPLIED SURFACE SCIENCE, 1998, 123 :585-589
[7]   Influence of sulfur interlayers on the Mg/CaAs(100) interface formation [J].
Hohenecker, S ;
Kampen, TU ;
Zahn, DRT ;
Braun, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2317-2323
[8]   INTERACTION OF SELENIUM WITH THE GAAS(001)-(2X4)/C(2X8) SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY [J].
LI, D ;
PASHLEY, MD .
PHYSICAL REVIEW B, 1994, 49 (19) :13643-13649
[9]   PHOTOELECTRON CORE-LEVEL SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDY OF THE SULFUR-TREATED GAAS(100) SURFACE [J].
MORIARTY, P ;
MURPHY, B ;
ROBERTS, L ;
CAFOLLA, AA ;
HUGHES, G ;
KOENDERS, L ;
BAILEY, P .
PHYSICAL REVIEW B, 1994, 50 (19) :14237-14245
[10]  
PARK S, IN PRESS APPL SURF S