Valence-band splitting and shear deformation potential of dilute GaAs1-xNx alloys

被引：58

作者：

Zhang, Y ^{[1
]}

Mascarenhas, A

Xin, HP

Tu, CW

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.61.4433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The valence-band splitting in thin GaAs1-xNx (0.011 less than or equal to x less than or equal to 0.033) epilayers strained coherently by the GaAs substrate is observed in electroreflectance. This study reveals that the valence-band deformation potential does not follow the linear interpolation of those for GaAs and GaN, but shows a rather strong composition dependence with a surprising bowing in a small composition region of the alloy. These results contradict the currently held view that the conduction band is greatly altered but that the valence band is only weakly perturbed by dilute nitrogen doping of GaAs.

引用

页码：4433 / 4436

页数：4

共 27 条

[1] ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS [J].