Optimization of Zn1-xAlxO film for antireflection coating by RF sputtering

被引：20

作者：

Bhuvana, K. P. ^{[1
]}

Elanchezhiyan, J. ^{[1
]}

Gopalakrishnan, N. ^{[1
]}

Balasubramanian, T. ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Phys, Thin Film Lab, Tiruchirappalli 620015, Tamil Nadu, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 473卷 / 1-2期

关键词：

ZnO; Sputtering; X-ray diffraction; Antireflection coating; ZINC-OXIDE FILMS; ZNO THIN-FILMS; OPTICAL-PROPERTIES; SOLAR-CELLS; MAGNETRON; GROWTH;

D O I：

10.1016/j.jallcom.2008.06.035

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structural, optical and electrical properties of the Zn1-xAlxO films deposited by RF magnetron sputtering have been investigated. The films of different concentration (x = 0.005, 0.01, 0.02, 0.04) deposited on Si (100) have been characterized using X-Ray diffraction (XRD), Reflectance and Hall effect measurements. From XRD analysis, it has been inferred that all the films are single crystalline with (0 0 2) preferred orientation and higher Full Width at the Half Maximum (FWHM) for 4 mol.% Al-doped ZnO (i.e., x = 0.04). Reflectance measurement suggests that the optimized concentration of Zn0.96Al0.04O film can be used as an antireflection coating for the solar cell as it exhibits the low reflectivity. The Hall measurements reveal that the electron concentration is found to be increasing with Al concentration and it has been maximum, 7.582 x 10(20)/cm(3) for Zn0.96Al0.04O with low resistivity of 0.0851 Omega cm. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：534 / 537

页数：4