Effects of Al content on properties of Al-N codoped ZnO films

被引：37

作者：

Zeng, YJ ^{[1
]}

Ye, ZZ ^{[1
]}

Lu, JG ^{[1
]}

Zhu, LP ^{[1
]}

Li, DY ^{[1
]}

Zhao, BH ^{[1
]}

Huang, JY ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2005年 / 249卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

ZnO; Al-N codoping; reactive magnetron sputtering; X-ray photoelectron spectroscopy (XPS);

D O I：

10.1016/j.apsusc.2004.11.073

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

N doped and Al-N codoped ZnO films were prepared by dc reactive magnetron sputtering with a series of metal-Zn targets having different Al contents. The best p-type electrical properties of codoped ZnO, such as carrier concentration of 2.52 x 10(17) cm(-3), resistivity of 28.3 ohm cm can be realized by using 0.4 at.% Al target. Results of Hall effect and X-ray photoelectron spectroscopy (XPS) measurements confirm that the presence of Al indeed facilitates the incorporation of N through formation Al-N bonds in codoped ZnO. Finally, a new judgement for codoping effect in ZnO is proposed tentatively: the best codoping effect can be realized when the codoped ZnO films possess a closest (002) d-spacing value to the nominally undoped ZnO. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：203 / 207

页数：5

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