Photoinduced long-term memory effects in n-type organic perylene transistors

被引：24

作者：

Barra, M. ^{[1
]}

Bloisi, F.

Cassinese, A.

Di Girolamo, F. V.

Vicari, L.

机构：

[1] Univ Naples Federico II, Dept Phys Sci, I-80125 Naples, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 12期

关键词：

organic field effect transistors; organic semiconductors; PERSISTENT PHOTOCONDUCTIVITY; GATE-VOLTAGE; KINETICS;

D O I：

10.1063/1.3272035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the photoexcitation response of high mobility n-type organic field-effect transistors is analyzed. White light exposure of N,N-'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) transistors is demonstrated to promote the occurrence of metastable conductance states with very long retention times, similar to what has been previously reported for p-type compounds. Even in the absence of a gate-source voltage V-GS, the complete recovery of the initial electrical condition can take up to 20 days. However, the initial state restoring is electrically controllable by the application of a positive V-GS. These effects suggest that PTCDI-C8H is an interesting n-type material for the development of light-sensitive organic circuitry.

引用

页数：3

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