Charge doping of graphene in metal/graphene/dielectric sandwich structures evaluated by C-1s core level photoemission spectroscopy

被引:47
作者
Dahal, Arjun [1 ]
Addou, Rafik [1 ]
Coy-Diaz, Horacio [1 ]
Lallo, James [1 ]
Batzill, Matthias [1 ]
机构
[1] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
基金
美国国家科学基金会;
关键词
WORK FUNCTION; METAL; INTERCALATION; CONTACT; SCATTERING;
D O I
10.1063/1.4824038
中图分类号
TB3 [工程材料学];
学科分类号
082905 [生物质能源与材料];
摘要
We show that for metal/graphene/dielectric sandwich structures, charge doping in graphene depends on both the work functions of the metal and the dielectric. Using C-1s core level photoemission spectroscopy we determine the charge doping in graphene for one-sided metal contacts as well as for sandwich structures that are commonly used in graphene devices. The measured Fermi-level shifts are in good agreement with a model that predicts that the difference in charge doping for graphene on a metal compared to graphene sandwiched between a metal and dielectric is given by Delta E-F approximate to 0.44 x root(Phi(metal) - Phi(dielectric)). (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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页数:6
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