In situ Raman scattering studies of the amorphous and crystalline Si nanoparticles

被引:69
作者
Sirenko, AA
Fox, JR
Akimov, IA
Xi, XX
Ruvimov, S
Liliental-Weber, Z
机构
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
nanostructures; phonons; inelastic light scattering;
D O I
10.1016/S0038-1098(99)00539-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report on in situ studies of the vibrational properties of Si nanoparticles and ultrathin layers grown by de magnetron sputtering in ultrahigh vacuum on amorphous MgO and Ag buffer layers. The average thickness of the Si layers ranged from monolayer coverage up to 200 Angstrom. Transmission electron microscopy has been used to determine size and shape of the Si nanoparticles. Changes in the phonon spectra of Si nanoparticles during the crystallization process have been studied by interference enhanced Raman scattering technique. Marked size-dependences in the phonon density of states and the relaxation of the k-vector conservation with decrease in size of the Si nanoparticles have been detected. The transition between crystalline-and amorphous-like behavior takes place in the particles with an average number of Si atoms equal to (7 +/- 2) X 10(2). (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:553 / 558
页数:6
相关论文
共 41 条
[1]   VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J].
ALBEN, R ;
WEAIRE, D ;
SMITH, JE ;
BRODSKY, MH .
PHYSICAL REVIEW B, 1975, 11 (06) :2271-2296
[2]   BILAYER INTERFERENCE ENHANCED RAMAN-SPECTROSCOPY [J].
BACSA, WS ;
LANNIN, JS .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :19-21
[3]  
BIMBERG D, 1985, LANDOLTBORNSTEIN NEW, V17, P5
[4]  
BIMBERG D, 1982, LANDOLTBORNSTEIN NEW, V17, P72
[5]   THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].
CAMPBELL, IH ;
FAUCHET, PM .
SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741
[6]  
CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11
[7]   INTERFERENCE ENHANCED RAMAN-SCATTERING FROM VERY THIN ABSORBING FILMS [J].
CONNELL, GAN ;
NEMANICH, RJ ;
TSAI, CC .
APPLIED PHYSICS LETTERS, 1980, 36 (01) :31-33
[8]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[9]   Pseudomorphic Si1-yCy and Si1-x-yGexCy alloy layers on Si [J].
Eberl, K ;
Brunner, K ;
Winter, W .
THIN SOLID FILMS, 1997, 294 (1-2) :98-104
[10]   Growth and optical properties of semiconductor nanocrystals in a glass matrix [J].
Ekimov, A .
JOURNAL OF LUMINESCENCE, 1996, 70 :1-20