Ga Ohmic contact for n-type diamond by ion implantation

被引：17

作者：

Teraji, T ^{[1
]}

Koizumi, S ^{[1
]}

Kanda, H ^{[1
]}

机构：

[1] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.126016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric contacts formed on an n-type diamond film by means of the Ga ion implantation were studied. The implanted Ga contacts revealed Ohmic property at room temperature. Contact resistivity for the implanted Ga contacts formed on the diamond film with donor density of 3 x 10(18) cm(-3) was 4.8 x 10(6) Ohm cm(2). The value is more than one order smaller than that for conventional vacuum-deposited metal contacts on the same diamond film. This contact has enabled us to measure electric properties for relatively lightly doped n-type diamond films in a temperature range between room temperature and 600 degrees C. (C) 2000 American Institute of Physics. [S0003-6951(00)04310-2].

引用

页码：1303 / 1305

页数：3

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