The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters

We describe the metalorganic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 degrees C, and 200 Torr in a horizontal quartz reactor using TMIn, TESb, AsH3 and PH3. By changing the layer thickness and composition, we have prepared structures with low temperature (less than or equal to 20K) photoluminescence wavelengths ranging from 3.2 to 4.4 mu m. Excellent performance was observed for a SLS light emitting diode (LED) and both optically pumped and electrically injected SLS lasers. An optically pumped, double heterostructure laser emitted at 3.86 mu m with a maximum operating temperature of 240K and a characteristic temperature of 33K. We have also made electrically injected lasers and LEDs utilizing a GaAsSb/InAs semi-metal injection scheme. The semi-metal injected, broadband LED emitted at 4 mu m with 80 mu W of power at 300K and 200 mA average current. The InAsSb/InAsP SLS injection laser emitted at 3.6 mu m at 120K.