A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallization

被引：26

作者：

Kwak, WK ^{[1
]}

Cho, BR ^{[1
]}

Yoon, SY ^{[1
]}

Park, SJ ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 03期

关键词：

crystallization; electric fields; poly-si TFT;

D O I：

10.1109/55.823571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electric field enhanced silicide mediated crystallization (SMC) was introduced for low-temperature polycrystalline silicon thin-film transistors (TFT's) on glass substrates. The amorphous silicon (a-Si) film having an average Ni thickness of 0.15 Angstrom, was completely crystallized at a temperature of 480 degrees C within 30 min in the presence of an electric field of 40 V/cm, The poly-Si is composed of needlelike crystallites with a few mu m length and about 50 nm width. The poly-Si TFT using the SMC exhibited a field effect mobility of 86 cm(2)/Vs, a threshold voltage of -0.6 V, and a subthreshold slope of 0.6 V/dec.

引用

页码：107 / 109

页数：3

共 10 条

[1] Enhanced solid-phase crystallization of amorphous Si by plasma treatment using reactive ion etching [J].