EFFECTS OF THE PRESENCE ABSENCE OF HCL DURING ATE OXIDATION ON THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

被引：45

作者：

PROANO, RE

AST, DG

机构：

来源：

关键词：

D O I：

10.1063/1.344317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2189 / 2199

页数：11

共 32 条

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