Transverse instability and inhomogeneous dynamics of superfast impact ionization waves in diode structures

被引：8

作者：

Minarsky, AM ^{[1
]}

Rodin, PB ^{[1
]}

机构：

[1] TECH UNIV BERLIN, INST THEORET PHYS, D-10623 BERLIN, GERMANY

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 06期

关键词：

D O I：

10.1016/S0038-1101(97)00054-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Propagation of a fast impact ionization front in high-voltage p(+)n-junctions is shown to exhibit a transversal instability which may lead to the formation of local switching channels and failure. An analytical theory of the phenomenon based on a 2D model of front propagation in p(+)nn(+)-diodes is suggested. We perform a stability analysis of the plane wavefront and present a 2D description of the nonuniform front propagation including formation of local switching channels. Special attention is given to the relation between the local switching channel ina diode and streamer discharge in solids. Comparison with experimental data related to Si pulse sharpening diodes and GaAs light-emitting diodes is provided. (C) 1997 Elsevier Science Ltd.

引用

页码：813 / 824

页数：12

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