Effect of base electrode on the crystallization and electrical properties of PLT

被引：6

作者：

Grill, A ^{[1
]}

Laibowitz, R ^{[1
]}

Beach, D ^{[1
]}

Neumayer, D ^{[1
]}

Duncombe, PR ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831

来源：

INTEGRATED FERROELECTRICS | 1997年 / 14卷 / 1-4期

关键词：

D O I：

10.1080/10584589708019994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lead lanthanum titanate (28% La) films, 900-1500 Angstrom thick, have been deposited by the sol-gel technique on Ir/Si and Pt/Ti/SiO2 substrates. The films have been rapidly thermal annealed for 1-4 min. at 650 degrees C and have been characterized by X-ray diffractometry, scanning electron microscopy and by electrical measurements. The dielectric constant of the PLT films deposited on the Pt electrodes reached a maximal value of 660, while for those deposited on the It electrodes it reached a maximal value of 775. The variation of the values of the dielectric constants of the different samples appears to be controlled mainly by the concentration of Pb in the films.

引用

页码：211 / 217

页数：7

共 6 条

[1]

BEACH D, 1994, INT FERROELECTRICS, V4, P535

[2] PT/TI/SIO2/SI SUBSTRATES [J].