High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs

被引：9

作者：

Hung, B. F. ^{[1
]}

Wu, C. H.

Chin, Albert

Wang, S. J.

Yen, F. Y.

Hou, Y. T.

Jin, Y.

Tao, H. J.

Chen, Shih C.

Liang, Mong-Song

机构：

[1] Natl Chiao Tung Univ, Syst Taiwan, Nano Sci & Technol Ctr, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

[3] Taiwan Semicond Mfg Co, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 02期

关键词：

full silicidation (FUSI); HfSiON; IrxSi;

D O I：

10.1109/TED.2006.888626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel 1000 degrees C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degrees C thermal stability above pure metal (900 degrees C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.

引用

页码：257 / 261

页数：5

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