Why nitrogen cannot lead to p-type conductivity in ZnO

被引：357

作者：

Lyons, J. L. ^{[1
]}

Janotti, A. ^{[1
]}

Van de Walle, C. G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 25期

关键词：

STACKING-FAULTS; LAYERS; ZNSE;

D O I：

10.1063/1.3274043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on electronic structure and atomic size considerations, nitrogen has been regarded as the most suitable impurity for p-type doping in ZnO. However, numerous experimental efforts by many different groups have not resulted in stable and reproducible p-type material, casting doubt on the efficacy of nitrogen as a shallow acceptor. Based on advanced first-principles calculations we find that nitrogen is actually a deep acceptor, with an exceedingly high ionization energy of 1.3 eV, and hence cannot lead to hole conductivity in ZnO. In light of this result, we reexamine prior experiments on nitrogen doping of ZnO. (C) 2009 American Institute of Physics. [doi:10.1063/1.3274043]

引用

页数：3

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