Amorphous materials - Finding order in disorder

被引:56
作者
Hufnagel, TC [1 ]
机构
[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
关键词
D O I
10.1038/nmat1227
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Describing the structure of amorphous materials such as metallic glasses has been a longstanding problem in materials science. A new technique called fluctuation microscopy allows us to see order on length scales that are difficult to study with traditional scattering techniques.
引用
收藏
页码:666 / 667
页数:3
相关论文
共 10 条
[1]   Universal criterion for metallic glass formation [J].
Egami, T .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1997, 226 :261-267
[2]   Diminished medium-range order observed in annealed amorphous germanium [J].
Gibson, JM ;
Treacy, MMJ .
PHYSICAL REVIEW LETTERS, 1997, 78 (06) :1074-1077
[3]   Using fluctuation microscopy to characterize structural order in metallic glasses [J].
Li, J ;
Gu, X ;
Hufnagel, TC .
MICROSCOPY AND MICROANALYSIS, 2003, 9 (06) :509-515
[4]   A structural model for metallic glasses [J].
Miracle, DB .
NATURE MATERIALS, 2004, 3 (10) :697-702
[5]   The influence of efficient atomic packing on the constitution of metallic glasses [J].
Miracle, DB ;
Sanders, WS ;
Senkov, ON .
PHILOSOPHICAL MAGAZINE, 2003, 83 (20) :2409-2428
[6]  
Stratton WG, 2004, MATER RES SOC SYMP P, V806, P275
[7]   Paracrystallites found in evaporated amorphous tetrahedral semiconductors [J].
Treacy, MMJ ;
Gibson, JM ;
Keblinski, PJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 231 (1-2) :99-110
[8]   Fluctuation microscopy: a probe of atomic correlations in disordered materials [J].
Voyles, PM ;
Gibson, JM ;
Treacy, MMJ .
JOURNAL OF ELECTRON MICROSCOPY, 2000, 49 (02) :259-266
[9]   Medium-range order in amorphous silicon measured by fluctuation electron microscopy [J].
Voyles, PM ;
Abelson, JR .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 78 (1-4) :85-113
[10]   Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature [J].
Voyles, PM ;
Gerbi, JE ;
Treacy, MMJ ;
Gibson, JM ;
Abelson, JR .
PHYSICAL REVIEW LETTERS, 2001, 86 (24) :5514-5517