Fluctuation microscopy: a probe of atomic correlations in disordered materials

被引:87
作者
Voyles, PM
Gibson, JM
Treacy, MMJ
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] NEC Res Inst, Princeton, NJ 08540 USA
[3] Argonne Natl Lab, Argonne, IL 60439 USA
来源
JOURNAL OF ELECTRON MICROSCOPY | 2000年 / 49卷 / 02期
基金
美国国家科学基金会;
关键词
fluctuation microscopy; medium-range order; disordered materials; amorphous semiconductors; quantitative microscopy;
D O I
10.1093/oxfordjournals.jmicro.a023805
中图分类号
TH742 [显微镜];
学科分类号
摘要
Fluctuation microscopy is a new technique to study medium-range structure in disordered materials. Low-resolution dark-field transmission electron microscope images are interpreted as spatially resolved diffraction maps. Statistical analysis of intensity variations in these maps provides information about higher-order atom position correlation functions. Here we give a qualitative description of the technique and explore the properties and utility of higher-order correlation functions in describing the structure of disordered materials.
引用
收藏
页码:259 / 266
页数:8
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