Temperature and RE elemental dependence for ZrO2-RE2O3 oxide film growth by IBAD method

被引：28

作者：

Iijima, Y

Kakimoto, K

Saitoh, T

Kato, T

Hirayama, T

机构：

[1] Fujikura Ltd, Mat Technol Lab, Koto Ku, Tokyo 1358512, Japan

[2] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2002年 / 378卷

关键词：

Y-123 coated conductors; ion-beam-assisted deposition; yttria-stabilized-zirconia; pyrochlore structure;

D O I：

10.1016/S0921-4534(02)01577-0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Biaxially aligned growth was studied by dual-ion-beam sputtering method for ZrO2-RE2O3 oxide films on polycrystalline Ni-based alloy substrates. Cube-textured (all axes aligned with a (10 0) axis substrate normal) films were obtained by low energy (similar to200 eV) Ar+ ion bombardment. The optimized growth temperature increased with the richer combined ratio for RE2O3, Several pyrochlore type oxides (RE2Zr2O7) were found to have sharp textures at the optimized temperatures of 200 degreesC. The most sharply textured films were obtained for Gd2Zr2O7 and Eu2Zr2O7. The time constant of texture evolution was about half compared to yttria-stabilized-zirconia. The texture sharpness degrades with the ion radius of rare-earth elements being apart from the ones for Gd, Eu. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：960 / 964

页数：5

共 13 条

[1] THEORY OF THIN-FILM ORIENTATION BY ION-BOMBARDMENT DURING DEPOSITION [J].