Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires

被引：144

作者：

Titova, L. V. ^{[1
]}

Hoang, Thang B.

Jackson, H. E.

Smith, L. M.

Yarrison-Rice, J. M.

Kim, Y.

Joyce, H. J.

Tan, H. H.

Jagadish, C.

机构：

[1] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[2] Miami Univ, Dept Phys, Oxford, OH 45056 USA

[3] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

[4] Dong A Univ, Coll Nat Sci, Dept Phys, Pusan 604714, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 17期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2364885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent polarized microphotoluminescence measurements of single GaAs/AlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects. (c) 2006 American Institute of Physics.

引用

页数：3

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