Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures

被引：11

作者：

Liu, M. ^{[1
]}

Fang, Q.

He, G.

Zhu, L. Q.

Zhang, L. D.

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China

[2] UCL, London WC1E 7JE, England

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 03期

关键词：

D O I：

10.1063/1.2432379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure and optical dielectric constants of HfOxNy thin films deposited by using radio frequency reactive magnetron sputtering have been investigated at various substrate temperatures. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between the Si substrate and the HfOxNy thin film during deposition. Spectroscopy ellipsometry (SE) results show that the substrate temperature has a strong effect on physical properties of HfOxNy thin films such as refractive index n and extinction coefficient k. Meanwhile, the optical dielectric functions of the films have determined using SE data and optical absorption properties of HfOxNy thin films deposited at different substrate temperatures have also been studied. (c) 2007 American Institute of Physics.

引用

页数：4

共 20 条

[1] Structural and stoichiometric change in nitrided HfO2 grown on Ge(100) by atomic layer deposition -: art. no. 111913 [J].

Chung, KB ;

Whang, CN ;

Cho, MH ;

Ko, DH .

APPLIED PHYSICS LETTERS, 2006, 88 (11)

[2] Comparison of interfacial and electrical characteristics of HfO2 and HfAlO high-k dielectrics on compressively strained Si1-xGex [J].

Curreem, KKS ;

Lee, PF ;

Wong, KS ;

Dai, JY ;

Zhou, MJ ;

Wang, J ;

Li, Q .

APPLIED PHYSICS LETTERS, 2006, 88 (18)

[3] Interface of ultrathin HfO2 films deposited by UV-photo-CVD [J].

Fang, Q ;

Zhang, JY ;

Wang, Z ;

Modreanu, M ;

O'Sullivan, BJ ;

Hurley, PK ;

Leedham, TL ;

Hywel, D ;

Audier, MA ;

Jimenez, C ;

Senateur, JP ;

Boyd, IW .

THIN SOLID FILMS, 2004, 453 :203-207

[4] The structural and interfacial properties of HfO2/Si by the plasma oxidation of sputtered metallic Hf thin films [J].

He, G ;

Fang, Q ;

Liu, M ;

Zhu, LQ ;

Zhang, LD .

JOURNAL OF CRYSTAL GROWTH, 2004, 268 (1-2) :155-162

[5] Rutile-type TiO2 thin film for high-k gate insulator [J].

Kadoshima, M ;

Hiratani, M ;

Shimamoto, Y ;

Torii, K ;

Miki, H ;

Kimura, S ;

Nabatame, T .

THIN SOLID FILMS, 2003, 424 (02) :224-228

[6]

KERN W, 1970, RCA REV, V31, P187

[7] Effects of substrate temperature on the physical properties of strained BaTiO3/LaNiO3 artificial superlattices [J].

Liang, YC ;

Liang, YC .

JOURNAL OF CRYSTAL GROWTH, 2005, 285 (03) :345-351

[8] Chemical compositions and optical properties of HfOxNy thin films at different substrate temperatures [J].

Liu, M. ;

Fang, Q. ;

He, G. ;

Zhu, L. Q. ;

Pan, S. S. ;

Zhang, L. D. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (06) :876-879

[9] Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy [J].

Lu, XB ;

Zhang, X ;

Huang, R ;

Lu, HB ;

Chen, ZH ;

Xiang, WF ;

He, M ;

Cheng, BL ;

Zhou, HW ;

Wang, XP ;

Wang, CZ ;

Nguyen, BY .

APPLIED PHYSICS LETTERS, 2004, 84 (14) :2620-2622

[10] Effect of heat treatment on structural, optical and mechanical properties of sputtered TiOxNy films [J].

Mohamed, SH ;

Kappertz, O ;

Niemeier, T ;

Drese, R ;

Wakkad, MM ;

Wuttig, M .

THIN SOLID FILMS, 2004, 468 (1-2) :48-56

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