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Patterned Graphene Electrodes from Solution-Processed Graphite Oxide Films for Organic Field-Effect Transistors
被引:310
作者:

Pang, Shuping
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机构:
Max Planck Inst Polymer Res, D-55128 Mainz, Germany Max Planck Inst Polymer Res, D-55128 Mainz, Germany

Tsao, Hoi Nok
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Max Planck Inst Polymer Res, D-55128 Mainz, Germany Max Planck Inst Polymer Res, D-55128 Mainz, Germany

Feng, Xinliang
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Max Planck Inst Polymer Res, D-55128 Mainz, Germany Max Planck Inst Polymer Res, D-55128 Mainz, Germany

Muellen, Klaus
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机构:
Max Planck Inst Polymer Res, D-55128 Mainz, Germany Max Planck Inst Polymer Res, D-55128 Mainz, Germany
机构:
[1] Max Planck Inst Polymer Res, D-55128 Mainz, Germany
关键词:
CARBON NANOTUBES;
LOGIC GATES;
POLYMER;
TRANSPARENT;
D O I:
10.1002/adma.200803812
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
A replacement for gold as the hole-injecting metal in organic electronic devices is presented: patterned graphene electrodes prepared from graphite oxide sheets by oxygen plasma etching. Solution-processed organic FETs with poly (3-hexylthiophene) as the semiconductor and these graphene electrodes are shown to perform as well as or even better than devices with gold contacts.
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页码:3488 / +
页数:5
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