Design and architecture of low-dielectric-constant organic-inorganic hybrids from octahydridosilsesquioxanes

被引:37
作者
Yang, Ben-hong [1 ,2 ,3 ]
Xu, Hong-yao [1 ,2 ]
Yang, Zhen-zhong [4 ]
Liu, Xiang-yang [5 ]
机构
[1] Donghua Univ, Coll Mat Sci & Engn, Shanghai 201620, Peoples R China
[2] Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China
[3] Hefei Univ, Dept Chem & Mat Engn, Hefei 230022, Anhui, Peoples R China
[4] Chinese Acad Sci, Inst Chem, State Key Lab Polymer Phys & Chem, Beijing 100190, Peoples R China
[5] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
关键词
POLYHEDRAL OLIGOMERIC SILSESQUIOXANE; THIN-FILMS; POLY(BINAPHTHYLENE ETHER); MECHANICAL-PROPERTIES; STAR POLYMERS; NANOCOMPOSITE; POLYIMIDE; COPOLYMERS; NANOPARTICLES; PRECURSORS;
D O I
10.1039/b915872c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molecular design and architecture of four novel organic-inorganic network hybrids were implemented via hydrosilylative addition reaction of octahydridosilsesquioxanes (H-8-POSS) with dienes. The structural characterization by the FTIR, C-13 MAS NMR and Si-29 MAS NMR technologies, respectively, indicates that two monomers are chemically bound to each other to form three-dimensional network hybrids that possess well film-formability. Atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that no phase separation occurred in the hybrid films, implying that the POSS molecules are uniformly dispersed into the polymeric system at the nanoscale. All POSS-containing well-dispersed hybrid films exhibit a good thermal stability with a decomposition temperature higher than 350 degrees C, and enhanced mechanical properties of a hardness of 0.21-0.26 GPa and the elastic modulus of 7.67-8.85 GPa, and low dielectric properties with a dielectric constant of 2.43-2.78. Interestingly, these properties can be further tuned by adjusting the length and the structure of the linking chain between POSS cages.
引用
收藏
页码:9038 / 9044
页数:7
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