Si-H bonds on the 6H-SiC(0001) surface after H-2 annealing

The Si-H bonds on the 6H-SiC(0001) on-axis surface were investigated using Fourier-transformed infrared attenuated total reflection (FTIR-ATR). The clear absorption bands of the Si-H stretching vibrations were observed from the 6H-SiC(0001) on-axis surface after H-2 annealing. The configuration of the Si-H bonds on the surface was discussed from the polarized spectra, the chemical characteristics and the electronegativities of the atoms bonded to the Si. The FTIR-ATR spectra suggested that the 6H-SiC(0001) on-axis surface after H-2 annealing at 1000 degrees C was primarily terminated by silicon monohydride with high regularity.