Strong ultraviolet photoluminescence in polycrystalline ZnO sputtered films

被引：34

作者：

Ozaki, K ^{[1
]}

Gomi, M ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231211, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 09期

关键词：

polycrystalline film; ZnO; UV photoluminescence; weak excitation; surface morphology; sputtering; red emission; green emission; defect;

D O I：

10.1143/JJAP.41.5614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline ZnO films both exhibiting strong ultraviolet (UV) photoluminescence (PL) and having smooth surfaces applicable to electronic devices have been obtained by rf-sputter deposition and subsequent heat treatment. The peak of UV PL was located at 3.05 eV and exhibited a linewidth as narrow as 70 meV, along with a strong intensity comparable to that observed for ZnO epitaxial film grown on sapphire under the same conditions. The UV PL intensity was found to lie complementary to that of the red PL emerging at around 2eV. which is caused by the crystal imperfection of the films along the c-axis. The increased film-growth temperature and subsequent heat treatment at low temperatures prominently reduced the red PL, which resulted in the above excellent features of the polycrystalline ZnO films.

引用

页码：5614 / 5617

页数：4

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