Improvement of [indium-tin-oxide silicon oxide n-Si] junction solar cell characteristics by cyanide treatment

被引:44
作者
Kobayashi, H
Tachibana, S
Yamanaka, K
Nakato, Y
Yoneda, K
机构
[1] OSAKA UNIV,FAC ENGN SCI,DEPT CHEM,TOYONAKA,OSAKA 560,JAPAN
[2] OSAKA UNIV,RES CTR PHOTOENERGET ORGAN MAT,TOYONAKA,OSAKA 560,JAPAN
[3] MATSUSHITA ELECT IND CO LTD,KYOTO RES LAB,MINAMI KU,KYOTO 601,JAPAN
关键词
D O I
10.1063/1.365340
中图分类号
O59 [应用物理学];
学科分类号
摘要
The performance of (indium-tin-oxide (ITO)/silicon oxide/n-Si(100)) junction solar cells is improved by immersing Si wafers in a potassium cyanide solution before the ITO deposition. Tt is found from x-ray photoelectron spectroscopy measurements that about 3% monolayer cyanide (CN-) ions are present on the Si surface after the cyanide treatment. The temperature dependence of the current-voltage curves shows that the band bending in n-Si is increased by the cyanide treatment. The increase in the band bending is attributed to an upward Si band edge shift caused by the presence of CN- ions at the oxide/Si interface and/or in the oxide layer. Conductance-voltage measurements show that the density of trap states considerably decreases after the cyanide treatment. The conductance decrease is attributed to the passivation of interface states by the adsorption of CN- ions on Si dangling bonds. (C) 1997 American Institute of Physics.
引用
收藏
页码:7630 / 7634
页数:5
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