Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices

被引：85

作者：

Wang, Zheng ^{[1
]}

Griffin, Peter B.

McVittie, Jim

Wong, Simon

McIntyre, Paul C.

Nishi, Yoshio

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 01期

关键词：

chalcogenide; nonvolatile memory; resistive switching; ZnCdS;

D O I：

10.1109/LED.2006.887640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonvolatile information storage devices based on an abrupt resistance switch when an electric bias is applied are very attractive for future memory applications. Recently, such a resistance switch was described in ferroelectric ZnxCd1-xS, but the mechanism of switching remains controversial. Here, we present results that elucidate the mechanism, showing that a metal needs to be easily oxidized and is capable of diffusing into the ZnCdS film as a cation impurity forming a filamentary metallic conduction path.

引用

页码：14 / 16

页数：3

共 19 条

[1]

[Anonymous], 2005, INT TECHNOLOGY ROADM

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3] ZNXCD1-XS FILMS FOR USE IN HETEROJUNCTION SOLAR-CELLS [J].

BURTON, LC ;

HENCH, TL .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :612-614

[4] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[5] SWITCHING PROPERTIES OF THIN NIO FILMS [J].

GIBBONS, JF ;

BEADLE, WE .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&

[6] Determination of the optimal cation composition of ferroelectric (ZnxCd1-x)S thin films for applications to silicon-based nonvolatile memories [J].

Hotta, Y ;

Rokuta, E ;

Jhoi, JH ;

Tabata, H ;

Kobayashi, H ;

Kawai, T .

APPLIED PHYSICS LETTERS, 2002, 80 (17) :3180-3182

[7] Non-volatile memory based on solid electrolytes [J].

Kozicki, MN ;

Gopalan, C ;

Balakrishnan, M ;

Park, M ;

Mitkova, M .

2004 NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS, 2004, :10-17

[8] Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications [J].

Lee, D ;

Choi, H ;

Sim, H ;

Choi, D ;

Hwang, H ;

Lee, MJ ;

Seo, SA ;

Yoo, IK .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) :719-721

[9] Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film [J].

Liu, CY ;

Wu, PH ;

Wang, A ;

Jang, WY ;

Young, JC ;

Chiu, KY ;

Tseng, TY .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (06) :351-353

[10] Electrical current distribution across a metal-insulator-metal structure during bistable switching [J].

Rossel, C ;

Meijer, GI ;

Brémaud, D ;

Widmer, D .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) :2892-2898

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