Electronic characterization of InSb quantum wells

被引：11

作者：

Chung, SJ

Dai, N

Khodaparast, GA

Hicks, JL

Goldammer, KJ

Brown, F

Liu, WK

Doezema, RE

Murphy, SQ

Santos, MB

机构：

[1] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA

[2] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

来源：

PHYSICA E | 2000年 / 7卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

InSb; quantum Hall effect; quantum well; infrared spectroscopy;

D O I：

10.1016/S1386-9477(00)00063-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have fabricated InSb quantum-well structures with high electron mobilities that are limited by scattering due to crystalline defects and remote ionized Si dopants. The integer quantum Hall effect is observed in these structures and has an unusual temperature dependence. Interband exciton transitions in a parabolic quantum well are used to determine an InSb/Al0.09In0.91Sb conduction-band offset ratio of 57% +/- 2%. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：809 / 813

页数：5

共 18 条

[1] UNCOOLED HIGH-SPEED INSB FIELD-EFFECT TRANSISTORS [J].

ASHLEY, T ;

DEAN, AB ;

ELLIOTT, CT ;

PRYCE, GJ ;

JOHNSON, AD ;

WILLIS, H .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :481-483

[2]

BALL M, UNPUB

[3]

Bastard G., 1988, WAVE MECH APPL SEMIC

[4] Study of factors limiting electron mobility in InSb quantum wells [J].

Chung, SJ ;

Goldammer, KJ ;

Lindstrom, SC ;

Johnson, MB ;

Santos, MB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1151-1154

[5] Observation of excitonic transitions in InSb quantum wells [J].

Dai, N ;

Brown, F ;

Barsic, P ;

Khodaparast, GA ;

Doezema, RE ;

Johnson, MB ;

Chung, SJ ;

Goldammer, KJ ;

Santos, MB .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1101-1103

[6] Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb [J].

Dai, N ;

Brown, F ;

Doezema, RE ;

Chung, SJ ;

Goldammer, KJ ;

Santos, MB .

APPLIED PHYSICS LETTERS, 1998, 73 (21) :3132-3134

[7]

DAI N, UNPUB APPL PHYS LETT

[8] COULOMB GAP AND LOW-TEMPERATURE CONDUCTIVITY OF DISORDERED SYSTEMS [J].

EFROS, AL ;

SHKLOVSKII, BI .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (04) :L49-L51

[9] Electrical properties of InSb quantum wells remotely doped with Si [J].

Goldammer, KJ ;

Liu, WK ;

Khodaparast, GA ;

Lindstrom, SC ;

Johnson, MB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1367-1371

[10] High-mobility electron systems in remotely-doped InSb quantum wells [J].

Goldammer, KJ ;

Chung, SJ ;

Liu, WK ;

Santos, MB ;

Hicks, JL ;

Raymond, S ;

Murphy, SQ .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :753-756

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