Growth mechanism of thin insulating layer in ferromagnetic tunnel junctions prepared using various oxidation methods

被引：15

作者：

Ando, Y ^{[1
]}

Hayashi, M ^{[1
]}

Iura, S ^{[1
]}

Yaoita, K ^{[1
]}

Yu, CC ^{[1
]}

Kubota, H ^{[1
]}

Miyazaki, T ^{[1
]}

机构：

[1] Tohoku Univ, Dept Appl Phys, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2002年 / 35卷 / 19期

关键词：

D O I：

10.1088/0022-3727/35/19/314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunnel magnetoresistance (TMR) ratio as a function of annealing temperature for ferromagnetic tunnel junctions prepared using different oxidation methods was measured. The junction with plasma oxidation showed a TMR ratio of 31% before heat treatment and it increased to 49% after annealing at 300degreesC. On the other hand, the TMR ratio for the junction with radical oxidation showed a maximum at 350degreesC. The difference of thermal stability originates from the different oxidation procedure. The initial oxidation process of thin aluminium films was investigated by scanning tunnelling microscopy (STM). The STM images revealed progression of oxygen penetration into an aluminium film composed of small grains. Oxygen first covered the aluminium grain surface homogeneously for the plasma-oxidized junction; then oxygen inserted into the aluminium grain boundaries selectively for the radical-oxidized junction.

引用

页码：2415 / 2421

页数：7

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