Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model

被引：107

作者：

Sato, Yoshihiro ^{[1
]}

Kinoshita, Kentaro ^{[1
]}

Aoki, Masaki ^{[1
]}

Sugiyama, Yoshihiro ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Embedded Memories Dev Dept, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 03期

关键词：

D O I：

10.1063/1.2431792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors investigated the resistive switching of transition metal oxide (TMO) junctions by applying a short voltage pulse and found that the response time of the "reset" process was dependent on the resistance in the low resistive state. By using a thermal conductive equation to calculate the temperature of the filamentary conductive path in the TMO film, the temperature in the reset process was estimated to reach the same temperature grade in each reset. On this basis, the previous experimental relation is well explained by assuming a general thermal chemical reaction model for the reset process. (c) 2007 American Institute of Physics.

引用

页数：3

共 8 条

[1]

Baek IG, 2005, INT EL DEVICES MEET, P769

[2] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[3]

Chen A, 2005, INT EL DEVICES MEET, P765

[4] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[5] Study on the resistive switching time of TiO2 thin films [J].

Choi, Byung Joon ;

Choi, Seol ;

Kim, Kyung Min ;

Shin, Yong Cheol ;

Hwang, Cheol Seong ;

Hwang, Sung-Yeon ;

Cho, Sung-sil ;

Park, Sanghyun ;

Hong, Suk-Kyoung .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

[6] SWITCHING PROPERTIES OF THIN NIO FILMS [J].

GIBBONS, JF ;

BEADLE, WE .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&

[7] Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide [J].

Kinoshita, K. ;

Tamura, T. ;

Aoki, M. ;

Sugiyama, Y. ;

Tanaka, H. .

APPLIED PHYSICS LETTERS, 2006, 89 (10)

[8] Reproducible resistance switching in polycrystalline NiO films [J].

Seo, S ;

Lee, MJ ;

Seo, DH ;

Jeoung, EJ ;

Suh, DS ;

Joung, YS ;

Yoo, IK ;

Hwang, IR ;

Kim, SH ;

Byun, IS ;

Kim, JS ;

Choi, JS ;

Park, BH .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5655-5657

← 1 →