Noise performances in polycrystalline silicon thin-film transistors fabricated by excimer laser crystallization

被引：21

作者：

Carluccio, R ^{[1
]}

Corradetti, A ^{[1
]}

Fortunato, G ^{[1
]}

Reita, C ^{[1
]}

Legagneux, P ^{[1
]}

Plais, F ^{[1
]}

Pribat, D ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91404 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 05期

关键词：

Calculations - Carrier concentration - Crystallization - Electric currents - Excimer lasers - Mathematical models - MOSFET devices - Polycrystalline materials - Semiconducting silicon - Spurious signal noise;

D O I：

10.1063/1.119799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study of the noise performances of polycrystalline silicon (polysilicon) thin-film transistors (TFTs) made by excimer laser crystallization is presented. The drain current spectral density of these devices shows an evident 1/f behavior and the origin of the noise was attributed to carrier number fluctuations. The flat-band voltage spectral density was found to be strongly correlated with the field-effect mobility, suggesting that the microscopic mechanism causing the carrier number fluctuations involves the localized states present at the grain boundaries. The noise level in the devices with the best electrical characteristics is comparable with that observed in c-Si metal-oxide-semiconductor field effect transistors, a major improvement if compared to polysilicon TFTs made by solid-phase crystallization. (C) 1997 American Institute of Physics.

引用

页码：578 / 580

页数：3

共 19 条

[1] Large 1/f noise in polysilicon TFT loads and its effects on the stability of SRAM cells [J].