Interfacial layer formation during high-temperature annealing of ZrO2 thin films on Si

被引：39

作者：

Howard, JM ^{[1
]}

Craciun, V ^{[1
]}

Essary, C ^{[1
]}

Singh, RK ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 18期

关键词：

D O I：

10.1063/1.1517407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-k materials deposited directly on silicon exhibit an interfacial layer between the grown layer and the underlying substrate. This is of particular concern in metal-oxide-semiconductor technologies where these layers have a deleterious effect on the overall capacitance of the resulting devices. In this letter, the growth and properties of this silicatelike interfacial layer are examined after postdeposition anneals in a vacuum, inert, and oxidizing atmospheres. X-ray reflectivity, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy have been used to characterize the growth and properties of this interfacial layer. (C) 2002 American Institute Of Physics.

引用

页码：3431 / 3433

页数：3

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