Electron tunneling rate in quantum dots under a uniform electric field

被引:74
作者
Kuo, DMT
Chang, YC
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1103/PhysRevB.61.11051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A stabilization method is used to evaluate the tunneling rate of an electron in isolated quantum dots of conical shape under uniform electric field. A stabilization graph is obtained by plotting the eigenvalues of a single quantum dot embedded in a confining box made of barrier material as functions of the size of the box. The eigenvalues of the system are calculated within the effective mass approximation via the Raleigh-Ritz variational method. The density of states associated with the quasibound state is constructed from the stabilization graph and is shown to have a Lorentzian profile. The width of the Lorentzian profile gives the tunneling rate. We show that the tunneling rate of the quantum dot system is 2-3 times smaller than that of a quantum well system with the same bound-to-continuum transition energy.
引用
收藏
页码:11051 / 11056
页数:6
相关论文
共 38 条
[1]   EXACT CALCULATIONS OF QUASI-BOUND STATES OF AN ISOLATED QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD - QUANTUM-WELL STARK RESONANCE [J].
AHN, D ;
CHUANG, SL .
PHYSICAL REVIEW B, 1986, 34 (12) :9034-9037
[2]   MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].
ARAKAWA, Y ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941
[3]   ELECTRONIC-STRUCTURE OF AN ISOLATED GAAS-GAALAS QUANTUM WELL IN A STRONG ELECTRIC-FIELD [J].
AUSTIN, EJ ;
JAROS, M .
PHYSICAL REVIEW B, 1985, 31 (08) :5569-5572
[4]   ELECTRONIC-STRUCTURE OF A GAAS QUANTUM-WELL IN AN ELECTRIC-FIELD [J].
BORONDO, F ;
SANCHEZDEHESA, J .
PHYSICAL REVIEW B, 1986, 33 (12) :8758-8761
[5]   Asymmetric stark shifts of exciton in InAs/GaAs pyramidal quantum dots [J].
Chang, K ;
Xia, JB .
SOLID STATE COMMUNICATIONS, 1997, 104 (06) :351-354
[6]   A tunable Kondo effect in quantum dots [J].
Cronenwett, SM ;
Oosterkamp, TH ;
Kouwenhoven, LP .
SCIENCE, 1998, 281 (5376) :540-544
[7]   Electronic structure of InAs/GaAs self-assembled quantum dots [J].
Cusack, MA ;
Briddon, PR ;
Jaros, M .
PHYSICAL REVIEW B, 1996, 54 (04) :R2300-R2303
[8]   SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].
DREXLER, H ;
LEONARD, D ;
HANSEN, W ;
KOTTHAUS, JP ;
PETROFF, PM .
PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255
[9]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[10]   CALCULATION OF ENERGIES AND WIDTHS OF RESONANCES IN INELASTIC-SCATTERING - STABILIZATION METHOD [J].
FELS, MF ;
HAZI, AU .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1972, 5 (03) :1236-+