Electrochemistry and photoetching of n-GaN

被引：134

作者：

Huygens, IM ^{[1
]}

Strubbe, K ^{[1
]}

Gomes, WP ^{[1
]}

机构：

[1] State Univ Ghent, Lab Fys Chem, B-9000 Ghent, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 05期

关键词：

D O I：

10.1149/1.1393436

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The (photo)electrochemical behavior of n-GaN[0001] in various aqueous solutions was studied using rotating-disk voltammetry, cyclic voltammetry, and electrical impedance measurements. it was found that the bandedges of the semiconductor shift over 60 mV/pH unit, indicating acid-base equilibria at the interface. In H2SO4 and KOH solutions, the photocurrent under anodic bias is associated with the oxidation of the semiconductor according to a three-equivalent reaction, leading to dissolution and roughening of the surface. In 1.2 M HCl solutions, n-GaN is stabilized for anodic decomposition due to the competing oxidation of Cl- ions. in the presence of oxalic acid and citric acid, anodic photocurrent multiplication was observed. Under cathodic polarization in the dark, Fe3+, Ce4+, HIO3, in acid medium and Fe(CN)(6)(3-) in alkaline medium are electrochemically reduced at a diffusion-limited rate. In I M KOH a high reactivity for O-2/H2O reduction is observed, explaining why n-GaN can be photoetched under open-circuit conditions in this solution. (C) 2000 The Electrochemical Society. S0013-4651(99)05-098-3. All rights reserved.

引用

页码：1797 / 1802

页数：6

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