Silicon nanomembranes

被引:29
作者
Lagally, Max G. [1 ]
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
基金
美国国家科学基金会;
关键词
D O I
10.1557/mrs2007.15
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article is, based on the presentation given by Max G. Lagally (University of Wisconsin-Madison) as. part of Symposium X: Frontiers of Materials Research on April 18, 2006 at the Materials Research Society Spring Meeting in San Francisco. Structures with nanoscale dimensions are the essence of nanotechnology. Beginning with quantum dots and buckyballs, nanostructures now include nanotubes, :rods, wires, and most recently, nanomembrane : very thin, large, freestanding or free -floating strain-engineered single crystals that can variously bemade into tubes or other shapes, cut into millions of identical wires, or used as conformal sheets. This article provides a brief overview of the fabrication and properties of strained-silicon nanomembranes.
引用
收藏
页码:57 / 63
页数:7
相关论文
共 14 条
[1]   Frontiers of silicon-on-insulator [J].
Celler, GK ;
Cristoloveanu, S .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :4955-4978
[2]   Spin-based Quantum Dot Quantum Computing in Silicon [J].
Eriksson, Mark A. ;
Friesen, Mark ;
Coppersmith, Susan N. ;
Joynt, Robert ;
Klein, Levente J. ;
Slinker, Keith ;
Tahan, Charles ;
Mooney, P. M. ;
Chu, J. O. ;
Koester, S. J. .
QUANTUM INFORMATION PROCESSING, 2004, 3 (1-5) :133-146
[3]  
Freund L., 2003, THIN FILM MAT STRESS
[4]  
Hoyt JL, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P23, DOI 10.1109/IEDM.2002.1175770
[5]   Nanomechanical architecture of strained bilayer thin films: From design principles to experimental fabrication [J].
Huang, MH ;
Boone, C ;
Roberts, M ;
Savage, DE ;
Lagally, MG ;
Shaji, N ;
Qin, H ;
Blick, R ;
Nairn, JA ;
Liu, F .
ADVANCED MATERIALS, 2005, 17 (23) :2860-+
[6]   IDENTIFICATION OF A MOBILITY-LIMITING SCATTERING MECHANISM IN MODULATION-DOPED SI/SIGE HETEROSTRUCTURES [J].
ISMAIL, K ;
LEGOUES, FK ;
SAENGER, KL ;
ARAFA, M ;
CHU, JO ;
MOONEY, PM ;
MEYERSON, BS .
PHYSICAL REVIEW LETTERS, 1994, 73 (25) :3447-3450
[7]   A printable form of silicon for high performance thin film transistors on plastic substrates [J].
Menard, E ;
Lee, KJ ;
Khang, DY ;
Nuzzo, RG ;
Rogers, JA .
APPLIED PHYSICS LETTERS, 2004, 84 (26) :5398-5400
[8]   ELECTRONIC-STRUCTURE OF SI(100)C(4X2) CALCULATED WITHIN THE GW APPROXIMATION [J].
NORTHRUP, JE .
PHYSICAL REVIEW B, 1993, 47 (15) :10032-10035
[9]   Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays [J].
Prinz, VY ;
Seleznev, VA ;
Gutakovsky, AK ;
Chehovskiy, AV ;
Preobrazhenskii, VV ;
Putyato, MA ;
Gavrilova, TA .
PHYSICA E, 2000, 6 (1-4) :828-831
[10]   Elastically relaxed free-standing strained-silicon nanomembranes [J].
Roberts, MM ;
Klein, LJ ;
Savage, DE ;
Slinker, KA ;
Friesen, M ;
Celler, G ;
Eriksson, MA ;
Lagally, MG .
NATURE MATERIALS, 2006, 5 (05) :388-393