Ion-beam-deposited ultrathin transparent metal contacts

被引:35
作者
Klauk, H
Huang, JR
Nichols, JA
Jackson, TN
机构
[1] Penn State Univ, Ctr Thin Film Devices & Elect Mat, University Pk, PA 16802 USA
[2] Penn State Univ, Proc Res Lab, University Pk, PA 16802 USA
关键词
contacts; optoelectronic devices; organic semiconductors; physical vapour deposition;
D O I
10.1016/S0040-6090(00)00728-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using ion-beam sputtering we have prepared ultrathin transparent metal contacts with large broad-band optical transmittance and low electrical sheet resistance. Metal films deposited by ion-beam sputtering have exceptionally small surface roughness, and films as thin as about 20 Angstrom are continuous and conductive, and provide optical transmittance as large as 80%. Ultrathin transparent metal contacts provide a number of advantages over more commonly used conductive transparent metal oxides such as indium tin oxide. Unlike indium tin oxide, ultrathin metal contacts can he deposited at room temperature and require no post-deposition anneal, allowing thin film optoelectronic devices such as organic light-emitting diodes and photovoltaic cells to be fabricated on low-cost, lightweight, flexible polymeric substrates. Transparent metal contacts may also eliminate the oxygen-related degradation of organic thin film devices associated with indium tin oxide contacts. Using 30-Angstrom thick ion-beam-deposited transparent palladium contacts we have fabricated organic light-emitting diodes on inexpensive, flexible plastic substrates and obtained devices with good injection and emission characteristics. Finally, unlike indium tin oxide, ultrathin metal contacts provide large optical transmittance in the ultraviolet part of the spectrum, making them useful for ultraviolet photodetectors and providing the potential for increased conversion efficiency for photovoltaic cells, especially for space applications. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:272 / 278
页数:7
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