Nucleation and growth of electroless palladium deposition on polycrystalline TiN barrier films for electroless copper deposition

被引：11

作者：

Hong, SW ^{[1
]}

Lee, YS

Park, KC

Park, JW

机构：

[1] Hanyang Univ, Div Engn & Mat Sci, Seoul 133791, South Korea

[2] Samsung Elect, Yongin 449711, Kyunggi Do, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2003年 / 150卷 / 01期

关键词：

D O I：

10.1149/1.1523413

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A mechanism of the nucleation and growth of palladium by electrochemical deposition on dc magnetron sputtered polycrystalline TiN thin films was proposed and effects of the microstructure of substrates were investigated. Field-emission scanning electron microscopy results showed that the nucleation of palladium and the number density of palladium nuclei are determined in the early stage of electrochemical deposition of palladium on TiN films. Plan-view transmission electron microscopy images of electrochemically nucleated palladium on TiN films for 5 s showed that the palladium nuclei were mainly formed on the grain boundaries of polycrystalline TiN thin films. These results mean that the microstructure of the substrate plays an important role in the electrochemical deposition of palladium, and the grain refinement of the substrate is thought to be an attractive method of acquiring high-quality films in electrochemical deposition. (C) 2002 The Electrochemical Society.

引用

页码：C16 / C18

页数：3

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