Observation of coherent phonon states in porous silicon films

被引：8

作者：

Dobryakov, AL ^{[1
]}

Karavanskii, VA

Kovalenko, SA

Merkulova, SP

Lozovik, YE

机构：

[1] Russian Acad Sci, Inst Spect, Troitsk 142092, Moscow Region, Russia

[2] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia

[3] Humboldt Univ, D-10117 Berlin, Germany

来源：

JETP LETTERS | 2000年 / 71卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.568338

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The dynamics of differential transmission and reflectance spectra of porous silicon films was studied using the femtosecond excitation technique (tau approximate to 50 fs, (h) over bar omega(pump) = 2.34 eV) with supercontinuum probing ((h) over bar omega(probe) = 1.6-3.2 eV) and controlled time delay with a step of Delta t = 7 fs between the pump and probe pulses. A short-lived region of photoinduced bleaching was observed in the differential transmission spectra at wavelengths shorter than the pump wavelength. The excitation of coherent phonon states with a spectrum corresponding to nanocrystalline silicon with an admixture of a disordered phase was observed. The relaxation of electronic excitation was found to slow down in the spectral region where the amplitude of excited coherent vibrations was maximal. (C) 2000 MAIK "Nauka / Interperiodica".

引用

页码：298 / 302

页数：5

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