Investigation of ultrashort photocarrier relaxation times in low-temperature-grown GaAs

被引：67

作者：

McIntosh, KA

Nichols, KB

Verghese, S

Brown, ER

机构：

[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington

[2] Sanders, Lockheed-Martin, Nashua

[3] Def. Adv. Research Projects Agency, Arlington

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 03期

关键词：

D O I：

10.1063/1.118412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photocarrier relaxation times tau(r) in low-temperature-grown (LTG) GaAs have been determined with time-resolved reflectance measurements. Measured tau(r) values are extremely sensitive to the substrate temperature during LTG GaAs growth and postgrowth anneal. Photogenerated-electron relaxation times as short as 90 fs are found for LTG GaAs grown at temperatures near 200 degrees C and annealed at temperatures below 580 degrees C. We report the results of a systematic investigation of the dependence of tau(r) on growth temperatures between 180 and 260 degrees C and anneal temperatures between 480 and 620 degrees C. (C) 1997 American Institute of Physics.

引用

页码：354 / 356

页数：3

共 14 条

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