Dielectric and photoluminescence properties of silicon nanoparticles embedded in a silica matrix

被引：5

作者：

Charvet, S ^{[1
]}

Madelon, R ^{[1
]}

Rizk, R ^{[1
]}

机构：

[1] ISMRA Univ Caen, CNRS, ESA 6004, LERMAT, F-14000 Caen, France

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 4-5期

关键词：

D O I：

10.1016/S0026-2714(99)00327-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an ellipsometric spectroscopy (ES) study of photoluminescent systems consisting of silicon nanograins grown within a silica matrix by thermal annealing after magnetron cosputtering of both silica and silicon chips. A novel approach was used for the modelling of the ES spectra which allowed us to estimate the values of excess silicon and to associate these values with the evolutions of both absorption coefficient and refractive index. The dielectric function of the inclusions was also deduced and correlated to the visible photoluminescence (PL) properties. The energy and efficiency of the PL was found to be closely governed by the rate of silicon incorporated within the silica matrix. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：855 / 858

页数：4

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