Recrystallization dynamics of phase change optical disks with a nitrogen interface layer

被引:10
作者
Trappe, C
Béchevet, B
Hyot, B
Winkler, O
Facsko, S
Kurz, H
机构
[1] Rhein Westfal TH Aachen, Inst Semicond Elect 2, D-52074 Aachen, Germany
[2] Lab Elect Technol & Instrumentat, F-38054 Grenoble, France
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 2B期
关键词
phase change; Ge2Sb2Te5; recrystallization velocity; nitride interface layer; real time measurement method; laser-induced temperature measurement; simulation;
D O I
10.1143/JJAP.39.766
中图分类号
O59 [应用物理学];
学科分类号
摘要
The recrystallization velocity of a phase change material is measured in real lime by observing the reflected laser power during the interaction of the laser with the sample. This technique is applied to compare the recrystallization behavior of phase change optical disk media with and without a nitride interface layer. It is shown that the enhanced cyclability induced by the nitride interface layer is correlated to an enhancement of the recrystallization velocity. The experimental determination of temperature profiles induced by laser pulses, combined with the numerical integration of the crystallization rate equations, leads to a quantitative interpretation of the observed recrystallization dynamics.
引用
收藏
页码:766 / 769
页数:4
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