Thermally stable, soft FeXN thin films

被引：20

作者：

Liu, YK ^{[1
]}

Kryder, MH

机构：

[1] Carnegie Mellon Univ, Ctr Data Storage Syst, Dept Phys, Pittsburgh, PA 15213 USA

[2] Seagate Res, Pittsburgh, PA 15203 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.126998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Significant improvement of the thermal stability in FeXN (X=Al, Zr, Ta,...) thin films is reported. Sputtered at the reduced target-substrate spacing of 38 mm, 200-nm-thick thermally stable FeXN thin films are obtained. They have hard-axis coercivity approximate to 0.1-2.0 Oe, easy-axis coercivity approximate to 1.5-3.0 Oe, H(k)approximate to 8-16 Oe, and B(s)approximate to 19-20 kG. Results of transverse-field annealing experiments in a uniform field of 700 Oe show no significant change of magnetic properties at 150 degrees C for 3 h. At 150 degrees C for 24 h H-k decreases by 2-4 Oe. Their easy/hard axes do not rotate and the coercivity remains almost unchanged. This superior thermal stability of FeXN films is very promising for high-moment write heads. (C) 2000 American Institute of Physics. [S0003-6951(00)04329-1].

引用

页码：426 / 428

页数：3