Electrical transport and thermometry of electroformed titanium dioxide memristive switches

被引：83

作者：

Borghetti, Julien ^{[1
]}

Strukov, Dmitri B. ^{[1
]}

Pickett, Matthew D. ^{[1
]}

Yang, J. Joshua ^{[1
]}

Stewart, Duncan R. ^{[1
]}

Williams, R. Stanley ^{[1
]}

机构：

[1] Hewlett Packard Labs, Informat & Quantum Syst Lab, Palo Alto, CA 94304 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 12期

关键词：

electrical resistivity; microswitches; ohmic contacts; temperature measurement; thermometers; titanium compounds; vacancies (crystal); OXIDE FILMS; THIN-FILMS; RESISTANCE; MEMORY; SRTIO3;

D O I：

10.1063/1.3264621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the electrical transport of electroformed titanium dioxide memristive switches from liquid helium to room temperatures in order to better understand their internal states. After electroforming, we observed a continuous transition between two distinct limiting behaviors: a nearly Ohmic "ON"-state and an "OFF"-state characterized by conduction through a barrier. We interpret our data in terms of a model in which the electroforming step creates a conducting channel that does not completely bridge the metal contacts on the titanium dioxide film. The switching then occurs as a result of voltage-induced changes in the oxygen vacancy concentration in the gap between the tip of the channel and the adjacent metal contact. We used the metallic resistivity of the conduction channel as an in situ thermometer to measure the local device temperature, thus revealing an important implicit state variable.

引用

页数：5

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