Impact of the trapping of anode hot holes on silicon dioxide breakdown

被引：10

作者：

Vogel, EM ^{[1
]}

Heh, DW

Bernstein, JB

Suehle, JS

机构：

[1] NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA

[2] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

[3] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 11期

关键词：

CMOS; defect generation; reliability; silicon dioxide; time-dependent dielectric breakdown;

D O I：

10.1109/LED.2002.805004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot holes are injected from the anode and trapped in thin silicon dioxide using constant voltage stress at large gate voltage. By comparing oxides having trapped holes with oxides in which the holes were detrapped, it is shown that the presence of trapped holes does not affect the breakdown of the oxide. Furthermore, as the temperature during stress is increased, less hole trapping is observed whereas the charge-to-breakdown of the oxide is decreased. The results show that although the trapping of hot holes injected using anode hole injection (AHI) may be partly responsible for defect generation in silicon dioxide, breakdown cannot be limited by the number of holes trapped in the oxide.

引用

页码：667 / 669

页数：3

共 18 条

[1] Hydrogen electrochemistry and stress-induced leakage current in silica [J].