Fabrication of a nanosize metal aperture for a near field scanning optical microscopy sensor using photoresist removal and sputtering techniques

被引:13
作者
Jung, MY
Lyo, IW
Kim, DW
Choi, SS [1 ]
机构
[1] Sun Moon Univ, Dept Phys, Ahsan 336840, Chungnam, South Korea
[2] Yonsei Univ, Res Ctr Atom Scale Surface Sci, Seoul 120749, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 04期
关键词
D O I
10.1116/1.582350
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Micromachining of a nanoscale Si3N4 tip for near field scanning optical microscopy (NSOM) and scanning force microscopy (SFM) has been described. The tapered optical metal-coated fiber is generally used to provide a subwavelength sized aperture on the tip. Several micromachining methods have been performed in order to have a metal aperture with a radius less than lambda/2. Apertures provided with less than lambda/2 and hollow tips would provide a suitable probe for both NSOM and SFM. A Si3N4 tip coated with a thin metal film will meet these requirements. The Si tip has been initially fabricated using reactive ion etching. The SiO2 etch masks with 10 and 2 mu m were patterned followed by Si etching. The etched Si post was at least 3 mu m tall and the radii of the tips were found to be 30 and 10 nm depending on the fabrication methods. A Si3N4 thin film was deposited on the fabricated Si tip using a low pressure chemical vapor deposition technique in order to provide a capability for an atomic force microscope. A 30 or 60 nm Cr metal film was deposited using an electron beam evaporator. The thick photoresist (PR) film was coated using a two-stage method in order to cover the tall Si tip. The PR film was carefully etched to have a metal aperture size with less than lambda/2. The removal of the Cr metal at the top of the Si tip has been performed using a Ne sputtering technique. The radius of the sputtered tip has been observed to be similar to 80 nm after 2 h sputter etching. (C) 2000 American Vacuum Society. [S0734-2101(00)17804-2].
引用
收藏
页码:1333 / 1337
页数:5
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